01-578-8002
Transistor
Used on meltem 2cc8. transistor ssm-sz-4200-04
01-578-8462
Diode Semiconductor Device
Transient voltage suppressor package type, do-15; type, axial-lead; vrwm reverse standoff voltage, 12.0; vbr breakdown voltage min, 13.3; vbr breakdown voltage max, 14.7; 500 watt peak pulse power capability; glass passivated junction; temperature range, -65 to 175 degrees clamping voltage, 19.9; peak pulse current, 25.1
01-578-9425
Diode Semiconductor Device
285.0mm overall length 45v silicon varactor diodes MSV38, 000 series built tough with fully passivated mesa construction
01-579-0230
Semiconductor Device Rectifier
01-579-0694
Semiconductor Device Assembly
Used on tension regulator. precision micropower shunt voltage reference tolerates capacitive loads, low output noise
01-579-0701
Semiconductor Device Assembly
Three therminal adjustable regulator output is short circuit protected, adjustable output down to 1.2v
01-579-0778
Transistor
Used on turquie. p channel enhancement mode verticl dmos fets low threshold, high input impedance, low input capacitance, fast switching speeds, low on resistance, low input
01-579-1737
Diode Semiconductor Device
Tunnel diode detectors positive output polarity; 2 - 18 ghz frequency range; 3:5:1 vswr; -55 to 100 c operating temp; apllications include radars, transmitters, power
01-579-1770
Diode Semiconductor Device
1.253" overall length unf thread series
01-579-2649
Transistor
Used on unidrive sp4403. igbt
01-579-5547
Transistor
Used on ef2000 aircraft. 1.550" overall length 1.050" overall width discrete pnp transistor type to-204 (to-3) ; container type-tray; quantity 100; designed for high power audio, stepping motor
01-579-5550
Transistor
Used on ef2000 aircraft. 1.550" overall length 1.050" overall width discrete npn transistor type to-204 (to-3) ; container type-tray; quantity 100; designed for high power audio, stepping motor
01-579-5637
Transistor
0.815" overall length 0.144" overall width rf mosfet power transistor, 5w, 28v, 100-500 mhz n-channel enhancement mode device; 100-500 mhz; dmos structure; lower noise floor
01-579-6137
Diode Semiconductor Device
3.0mm overall length 2.5mm overall width BZX84 series voltage regulator diode
01-579-6505
Transistor
1.8mm overall length 2.0mm overall width
01-579-6615
Diode Semiconductor Device
Used on iol code assembly, wire, dio, anti surface warfare improvement program (aip). fast switching fast rectifier fast switching for high effeciency; low forward voltage drop; low leakage current; high forward current operation; high forward surge capability; solder dip 260 deg c; component in accordance to rohs 2002/95/ec
01-579-6640
Transistor
1.8mm overall length 2.0mm overall width npn general purpose transistor applications include low noise stages in tape recorders, hi-fi amps
01-579-7465
Transistor
2.8mm overall length 2.1mm overall width n-channel, logic level, tmos fet, transistor reel size 7", tape width 8mm, 3000 per reel; typical applications include dc-dc converter
01-579-7506
Semiconductor Device Rectifier
Used on remote video surveillance system (rvss). shelf rectifer 24v dc
01-579-7616
Semiconductor Device Rectifier
Used on remote video surveillance system (rvss). rectifier 24vdc/750w
01-579-7675
Transistor
6.3mm overall length 3.3mm overall width npn small-signal darlington transistor switching applications include print hammer, relay, solenoid
01-579-7686
Photo Semiconductor Device
Semiconductor device, photo
01-579-7819
Semiconductor Device Rectifier
Used on 507318 (29355) case assembly, crypto. rectifier module; power rectifier, ac rectifier module 85-264vac in-48vdc out, 150w
01-579-8567
Transistor
Npn epitaxial silicon transistor low collector emitter saturation voltage
01-579-8774
Diode Semiconductor Device
Diode zener single 12.05v 5% 350mw 3-pin sot-23 t/r
01-579-9133
Diode Semiconductor Device
High efficiency 50 amp rectifier
01-579-9687
Diode Semiconductor Device
Zener diode
01-579-9688
Diode Semiconductor Device
Zener diode
01-579-9691
Diode Semiconductor Device
Zener diode
01-579-9693
Transistor
N-channel rf amplifier
01-579-9779
Diode Semiconductor Device
High current low dropout regulator voltage = adj, low dropout voltage, current = 5.0a
01-579-9942
Diode Semiconductor Device
Zener diode
01-580-0629
Diode Semiconductor Device
Used on b-1b aircraft. zener diode
01-580-0737
Diode Semiconductor Device
Used on ca70608-001(19156), receiver-transmitter. navy: diode, pin; cage: diodes, rf pin switch , surface mount; pin switch common cathode suggested source of supply is 1RA91 - agilent technologies which is obsolete; p/n hsmp-3824
01-580-0775
Transistor
Used on ca70608-001(19156), receiver-transmitter; an/trn-41. navy: transistor, rf; cage 19156: rf transistor
01-580-0779
Transistor
Used on ca70608-001(19156), receiver-transmitter; an/trn-41. navy: transistor, rf; cage 19156: rf transistor common base bipolar transistor; 25 watts, 50 volts, pulsed avionics 960 - 1215 mhz; storage temp: M65.0/P150.0 deg c; case outline: 55cx, style 1
01-580-0968
Unitized Semiconductor Devices
2.90mm overall length 1.01mm overall width low capacitance tvs diode array molding compound flammability rating = ul 94v-0
01-580-1049
Semiconductor Device Rectifier
General purpose rectifier low forward voltage drop & high surge current capability
01-580-2138
Diode Semiconductor Device
Fast rectifier storage temperature range = -65 to 150 celsius (same as operating junction temperature)
01-580-2194
Transistor
Used on nsn 4920014955910. transistor
01-580-2331
Diode Semiconductor Device
Used on combined system interim acc-rpc-sfp. 5.5mm overall length 2.8mm overall width junction temperature: 150 deg c; storage temp. range: M65/P150 deg c; junction capacitance: 850 pf; glass passivated junction; stand-off voltage range: 8.2 v to 200.0 v; lead-free component; aprrox. weight: 77 mg
01-580-2349
Diode Semiconductor Device
3.5mm overall length 1.4mm overall width surface mount zener diode 500mw power disspipation, medium current
01-580-2597
Transistor
Used on receiver transmitter arc222. next higher assembly 724546
01-580-2632
Transistor
19.05mm overall length pnp general purpose amplifier collector-emitter voltage = 60v, collector power dissipation = 625mw
01-580-2845
Transistor
0.730" overall length 0.620" overall width junction pattern arrangement: npn; body height: 0.510 in. max
01-580-3475
Semiconductor Device Rectifier
Schottky rectifier 0.5 ampere, low forward voltage, less than 430 mv
01-580-3493
Diode Semiconductor Device
01-580-3602
Diode Semiconductor Device
01-580-3803
Diode Semiconductor Device
Used on 40eps12. 35.1mm overall length 15.9mm overall width semiconductor, device, diode the 40eps rectifier safeir serier has been optimized for very low forward voltage drop. reliable operation up to 150 degrees celcius junction temperature
01-580-3929
Transistor
19.05mm overall length 3.60mm overall width npn general purpose amplifier collector-emitter voltage (vceo) = 40v, collector power dissipation pc (max) = 625mw
