Semiconductor Devices And Associated Hardware FSG 59 — FSC 5961

NSN
NIIN
Name
Details
01-573-3794
Diode Semiconductor Device
0.472" overall length 2 copper/tin leads; polymer epoxy insulation; bulk pack; 0.6 transient joules; 100 amp peak current
01-573-4017
Diode Semiconductor Device
0.600" overall length
01-573-5295
Diode Semiconductor Device
Used on type 45 destroyer-electrical systems.
01-573-6033
Transistor
01-573-7448
Diode Semiconductor Device
Used on cwas router encl assy 810-410d-2; cwas gtwy encl assy 1552-001-01. schottky diode, 3a, 50v 3amp, 50v
01-573-7496
Transistor
Used on transistor. n-channel 1000v-1.3-7.3 to 247 powermesh mosfet extremly high dv/dt capability; 100 percent avalanche tested; very low intrinsic capacitances; gate charge minimized; +-30 v gate to source voltage rating
01-573-8358
Diode Semiconductor Device
Semiconductor device, diode
01-573-8837
Transistor
Operating junction
01-573-9776
Diode Semiconductor Device
Used on helicopters hd-19.
01-574-0327
Diode Semiconductor Device
Used on fixture,lighthigh-bay 600a-3/t5-rl5. 132.0mm overall length 30.0mm overall width (navy) led driver, 17w, 700ma; xitanium driver quantity is 5; item has class 2 electrical insulation; housing material is noryl HS2000, which is polyphemylene; weight is 60.0 grams; output voltage is 24.0 volts dc; this 17 watt driver provides a constant voltage output for operating led systems
01-574-0726
Diode Semiconductor Device
Used on 299002-1 (24930) amplifier, radio frequency. 1500 mv/mw min.; flatness porm 1.0 db max. zero bias schottky; frequency 1.0-18.0 ghz
01-574-1616
Thyristor Semiconductor Device
01-574-1952
Transistor
0.110" overall length 0.047" overall width power mosfet
01-574-2847
Diode Semiconductor Device
0.305" overall length 0.218" overall width transil
01-574-6067
Diode Semiconductor Device
Used on cessna 182t turbo skylane aircraft console cover. single light emitting diode assy
01-574-7422
Semiconductor Device Assembly
Used on 8145-01-534-3597 multi-temp refr cont. diode assembly
01-574-9101
Diode Semiconductor Device
Used on mult-temp refr cont nsn 8145-01-534-3597. diode, block
01-575-1516
Diode Semiconductor Device
Used on ADTO. rectifier
01-575-1725
Diode Semiconductor Device
01-575-3147
Transistor
Mosfet
01-575-3148
Transistor
Mosfet
01-575-3149
Transistor
Mosfet
01-575-3505
Semiconductor Device U Rectifier
0.250" overall length 0.086" overall width
01-575-3682
Transistor
0.250" overall length 0.086" overall width power mosfet 20 amps, 60 volts, logic level n-channel dpak applications:power supplies, converters, power motor controls,
01-575-3789
Diode Semiconductor Device
Zener diode 500mw 75v +-5 percent sod-123 case:void free, transfer-molded, thermosetting plastic case; finish:corrosion resistant finish, easily solderable; operating temperature:negative 55 to 150 degree celsius; voltage-zener (nom) :75v; power (max) :500mw; impedance (max) :270 ohm; mounting type:surface mount
01-575-4160
Semiconductor Device U Rectifier
0.380 mils overall length 0.160" overall width item description:8a, 400v ultrafast rectifier; operating junction temperature:175 degree celsius; case:epoxy, molded, epoxy meets ul 94 v-0; weight:1.7 grams (approximately) ; finish:all external surfaces corrosion resistant
01-575-4271
Transistor
0.250 mils overall length 0.086" overall width operating/storage junction temperature range:negative 65 to 150 degree celsius
01-575-5092
Transistor
0.110" overall length 0.083" overall width jfet switching transitor pin:3; junction/storage temperature range:negative 55 to 150 degree celsius; shipping:3000/tape
01-575-5317
Diode Semiconductor Device
Used on test station electronic/electrical equipment. diode, pico ampere, to-78
01-575-5685
Photo Semiconductor Device
Used on v-80ab-f misssion data recorder. photo tr, rpm-20-pb-t
01-575-6348
Diode Semiconductor Device
0.800" overall length 0.605" overall width zero recovery rectifier
01-575-7625
Transistor
0.575" overall length hiperfet power mosfet q-class vdss 1000 volts
01-575-7633
Transistor
0.575" overall length high voltage mosfet 1000 v vdss
01-575-7711
Diode Semiconductor Device
0.092 mils overall length micrwave tunnel diode planar construction; 100-200 microamperes at ip; 80 microamperes max. at iv
01-575-7790
Transistor
0.610" overall length 0.185" overall width power mos 7
01-575-8231
Diode Semiconductor Device
01-575-8233
Semiconductor Device Rectifier
0.350" overall length
01-575-9449
Diode Semiconductor Device
Leadfree; diodes packaged on 7 foot reel, 3000 count; grounded center leads provide up to 10 db higher isolation; ideal for rf/id
01-575-9521
Diode Semiconductor Device
Tunnel diode
01-575-9523
Diode Semiconductor Device
Pin diode
01-575-9624
Diode Semiconductor Device
01-575-9834
Diode Semiconductor Device
Surface mount rf schottky barrier diodes single configuration; leadfree; diodes packaged on 7 foot reel, 3000 count; ideal for mixing, detecting, switching, sampling, clamping,
01-575-9865
Diode Semiconductor Device
Beam lead schottky dc tested diode platinum tri-metal system; silicon nitride passivated; low barrier; packaged 20 units; 20 ohm max dynamic reistance; suited for stripline or microline circuits; dc tested; 4 volt min breakdown
01-576-1133
Diode Semiconductor Device
Used on mrap - unique nsn - mrap no permanent wsdc identified.
01-576-1631
Diode Semiconductor Device
01-576-1681
Diode Semiconductor Device
01-576-1705
Diode Semiconductor Device
Used on aircraft applications. transient suppressor forward current (continuous/average) 1ma; max reverse voltage 36v; substrat material-silicium; contact construction-metallurgically bonded; quality level 25; thermal resistance junction to case 10cel/w; max junction temp 175deg c; total power dissipation 1mw; package type D0202aa; package material-metal etanche; package shape-cylindrique, sorties axiales; number of package pins 2
01-576-2322
Semiconductor Device Rectifier
2.8mm overall length 2.2mm overall width
01-576-2365
Diode Semiconductor Device
0.120" overall length has metallurgical bond
01-576-2455
Transistor