01-576-2460
Diode Semiconductor Device
Used on ca70606-001 (19156), monitor assy, remote status. transient suppressor, diode everse stand-off voltage 25.6v; breakdown voltage 28.5v min 31.5v max at 1ma; max reverse leakage 5 microamps; max clamping volatge 41.4v; max peak pulse current 36.0a
01-576-2700
Unitized Semiconductor Devices
Used on ca70606-001 (19156), monitor assy, remote status; ca70608-001 (19156) receiver-transmitter. (dwg cage 19156) transistor array, general purpose amplifier; (dwg cage 7D893) npn multi-chip general purpose amplifier case: super sot-6; operating
01-576-4232
Transistor
Used on p-channel jfets. low capacitance-5pf, fast switching-ton-25ns
01-576-4483
Diode Semiconductor Device
Diode; surface mount rf schottky barrier diodes surface mount package; high breakdown voltage; low fit (failure in time) rate; six-sigma quality level; designed for both analog
01-576-4901
Transistor
Used on transistor. IRFL9014 hexfet power mosfet surface mount; avaible in tape
01-576-5113
Diode Semiconductor Device
Used on cca, rate of turn sensor, b1-b aircraft. diode
01-576-5382
Diode Semiconductor Device
Used on semiconductor device, diode. surface mount hermetically sealed superfast rectifier diode ultr low reverse recovery time; ultra low switching losses; soft, non snap-off recovery charateristics; glass passivated for hermetic sealing; reverse avalanche capability; miniature package size
01-576-5835
Transistor
Used on n-channel mosfet. transistor continuous drain current :4.2 a; drain-source breakdown voltage: 30v; gate-source breakdown voltage: 20 v
01-576-5996
Diode Semiconductor Device
01-576-6009
Diode Semiconductor Device
01-576-6030
Diode Semiconductor Device
01-576-6065
Semiconductor Device U Rectifier
Used on an/usq-149(v)2, obrp kit.. 0.600" overall width
01-576-6117
Diode Semiconductor Device
Minipak surface mount rf schottky barrier diodes features, surface mount minipak package, low height, 0.7 mm max, small footprint, 1.75 MM2; better thermal conductivity for higher power dissipation, single; single
01-576-6979
Transistor
2.8mm overall length 2.1mm overall width marking code: M6p; drain-source voltage: 40v; total power dissipation: 250mw; delay time: 10 ns; rise time: 10 ns; turn off time: 100 ns
01-576-7501
Diode Semiconductor Device
Used on ca21429-002 (19156) power supply ac/dc. 0.182" overall length
01-576-7506
Diode Semiconductor Device
Used on ca21429-002 (19156) power supply ac/dc. 0.205" overall length
01-576-7866
Transistor
Used on transistor. p-channel 60v (d-s) mosfet halogen-free according to iec 61249-2-21 definition; trecnhfet power mosfet; high-side switching; low threshold: -2v (typically) ; fast switching speed: 20 ns (typ) ; low input capacitance: 20pf (typ)
01-576-8042
Diode Semiconductor Device
01-576-8357
Diode Semiconductor Device
01-576-8500
Diode Semiconductor Device
0.925" overall length 12vdc; 15ma; 8mcd; green; op temp M25/P85 deg c; brass/ch
01-576-8515
Diode Semiconductor Device
0.925" overall length green diffused lens; 15ma; 45 mcd; brass/chrom housing; o
01-576-8722
Diode Semiconductor Device
3.7mm overall length 1.6mm overall width
01-576-8729
Diode Semiconductor Device
3.7mm overall length 1.6mm overall width
01-576-8734
Diode Semiconductor Device
3.7mm overall length 1.6mm overall width
01-576-8740
Diode Semiconductor Device
3.7mm overall length 1.6mm overall width
01-576-8746
Diode Semiconductor Device
3.7mm overall length 1.6mm overall width
01-576-8755
Diode Semiconductor Device
3.7mm overall length 1.6mm overall width
01-576-8761
Diode Semiconductor Device
3.7mm overall length 1.6mm overall width
01-576-8763
Diode Semiconductor Device
3.7mm overall length 1.6mm overall width
01-576-9123
Semiconductor Device Rectifier
4.3mm overall length 3.6mm overall width metal-to-silicon schottky barrier rectifier; 2 amps, 40 volts; smb case 403a; highly stable oxide passivated junction; case: molded epoxy; guardring for over-voltage protection; cathode polarity band; all external surfaces corrosion resistanct
01-576-9245
Diode Semiconductor Device
2.365" overall length silicon planar power zener diode
01-576-9500
Diode Semiconductor Device
2.365" overall length silicon planar power zener diode
01-576-9507
Diode Semiconductor Device
2.365" overall length silicon planar power zener diode
01-577-1935
Diode Semiconductor Device
0.625" overall length 0.405" overall width 50 units per tube, schottky barrier rectifier; op temp M6
01-577-1942
Diode Semiconductor Device
0.205" overall length 0.103" overall width schottky barrier rectifier, surface mount, 5000 per tape/
01-577-1956
Diode Semiconductor Device
0.400" overall length hexfred common cathode diode, ultrafast revcovery
01-577-2030
Transistor
Npn silicon rf power transistor
01-577-2703
Diode Semiconductor Device
No, inal zener voltage 6.2; zener test current 20; zener impedance 7; reverse current in volts 3.5
01-577-2704
Diode Semiconductor Device
zener voltage 12.0; zener test current 20; zener impedance 30; reverse current in volts 9.0; zener current
01-577-2754
Transistor
0.114" overall length 0.094" overall width
01-577-2777
Diode Semiconductor Device
0.114" overall length 0.094" overall width dual switching diode
01-577-2811
Diode Semiconductor Device
0.114" overall length 0.094" overall width zener voltage regulator
01-577-2818
Diode Semiconductor Device
0.114" overall length 0.094" overall width zener voltage regulator
01-577-2841
Diode Semiconductor Device
0.205" overall length 0.103" overall width schottky power rectifier surface mount; j bend leads; 1.0 a average rectified forward current
01-577-2853
Diode Semiconductor Device
0.313" overall length 0.230" overall width schottky power rectifier surface mount; j bend leads
01-577-4711
Diode Semiconductor Device
Used on control applications. 0.075" overall length transient voltage suppressor plastic surface mount; zener overvoltage transient suppressor; device marking lmc; 13inch reel; peak power 600 watts
01-577-5077
Thyristor Semiconductor Device
01-577-5099
Transistor
N channel power mofset features: avalanche rugged technology; rugged gate oxide technology; lower input capacitance; improved gate charge; extended safe operating area; 175 degree celsuis operating temperature
01-577-5911
Transistor
Used on radar system. 0.900" overall length 0.400" overall width npn silicon microwave power transistors, common base configuration, broadband class c operation, high efficiency inter-digitized geometry, diffused emitter ballasting resistors, gold metallization system, internal input
01-577-6153
Semiconductor Device Assembly
T-1 3/4, 2mm x 5 mm rectangular biclor led lamps; switch telephone, selector desigend for applications where dual state illumination is required in the same package: there are two led chips, mounted on a central common cathode lead for on-axis viewability; colors between the two chips can be generated by independently pulse width modulating the led chips
