01-580-4459
Transistor
6.60mm overall length 2.30mm overall width n-channel trenchmos siliconmax standard level fet fet = field-effect transistor (trenchmos technology)
01-580-4860
Diode Semiconductor Device
Used on die family. tech package mos hv TO247 09295sa
01-580-6129
Transistor
Critical application
01-580-6135
Diode Semiconductor Device
Used on ca70608-001 (19156), receiver-transmitter. 0.100" overall length (dwg title) semiconductor device, diode, silicon, switching, type 1N5719
01-580-6553
Semiconductor Device U Rectifier
Used on nuclear power plants. 1.144" overall length 1.144" overall width diode
01-580-6887
Transistor
Used on vhf fm/fh; general hellenic staff. 0.249" overall length 0.130" overall width medium power npn silicon high current transistor surface mount lead (pb) free; npn silicon epitaxial transistor; 1000/tape
01-580-7247
Diode Semiconductor Device
Small foot print, surface mountable; very low forward voltage drop; high frequency operation; guard ring for enhanced ruggedness
01-580-8112
Diode Semiconductor Device
01-580-9110
Semiconductor Device Rectifier
Used on armoured vehicle for infantry combat/vehicule blinde. 109.2mm overall length 30.3mm overall width dwg: rectifier bridge asm p/n 10510397 positive diode, 3 required (pia) ; p/n 10510398 negatuve diode, 3 required (pia)
01-580-9146
Transistor
Used on accessory set (p/n 3875as10027) pcc: ivb circuit card assembly. pnp silicon high-power transistors
01-580-9270
Unitized Semiconductor Devices
Used on ca70608-0019191560, receiver-transmitter. 2.8mm overall length 1.5mm overall width dwg - cage 19156: transistor array, general purpose amplifier; datasheet - cage 7D893: npn case: super sot-6; transistor type: C1, B1, E1: npn; C2, B2, E2: pnp; operating
01-580-9280
Unitized Semiconductor Devices
Used on ca70608-001(19156), receiver-transmitter. 3.0mm overall length 1.5mm overall width dwg- cage 19156: transistor array, general purpose amplifier; dwg- cage 7D893: pnp multi-chip general purpose amplifier fairchild pkg: supersot-6
01-580-9394
Transistor
Used on vhf fm/fh; general hellenic staff. 5.0mm overall length n-channel 30-v (d-s) mosfet trenchfet power mosfet; tape
01-580-9416
Diode Semiconductor Device
Used on vhf fm/fh; general hellenic staff. 0.160" overall length 0.205" overall width cage: surface mount 600 watt transient voltage suppressor j bend design; bidirectional configuration; rohs compliant; 12 mm tape, 750 per 7 inch reel
01-580-9742
Diode Semiconductor Device
Used on control, modular. diode, stabistor
01-580-9885
Diode Semiconductor Device
01-581-0616
Transistor
38.50mm overall length 25.00mm overall width
01-581-0640
Transistor
Used on allison transmission div allison transmission;aerospace systems. 38.6mm overall length 25.1mm overall width power mos iv pulsed drain current: 90 amps; gate-source voltage: plus or minus 30 volts; total power dissipation at tc equals 25 degree celsuis: minus 55 to 150 degree celsuis; inductive current clamped: 90 amps; pulsed source current (body diode) : 90 amps
01-581-1583
Semiconductor Device Rectifier
0.642" overall length 0.768" overall width
01-581-1800
Diode Semiconductor Device
Special mil-spec
01-581-1813
Diode Semiconductor Device
Used on engine, outboard, yamaha model f225txr; engine, outboard, yamaha model lf225txr. rectifier, semiconductor
01-581-1992
Diode Semiconductor Device
Used on compressor, ctfgl tt300-g6-1-st-p-o-nc. diode rectifier diode rec/scrm 250a skkh 162/16e; must be ordered via kit p/n 100047-1 (kit- diode rectifiers (sie
01-581-2519
Transistor
Used on ca70608-001(19156), receiver-transmitter. dwg: rf transistor; cage: 7 watts, 50 volts, pulsed avionics 960 - 1215 mhz, common base bipolar transistor
01-581-2531
Transistor
Used on ca70608-001(19156), receiver-transmitter. dwg: rf transistor; cage: 45 watts, 50 volts, pulsed avionics 960 - 1215 mhz; common base bipolar transistor
01-581-2897
Diode Semiconductor Device
Used on ca70608-001(19156), receiver-transmitter. 2.7mm overall length 2.2mm overall width navy: diode, pin; cage: 19156: rf power limiter; cage 24539: surface mount rf pin limiter diode
01-581-2972
Semiconductor Device Assembly
2.580" overall length 1.790" overall width diode header assembly
01-581-4467
Diode Semiconductor Device
01-581-4878
Diode Semiconductor Device
01-581-5097
Diode Semiconductor Device
01-581-5164
Diode Semiconductor Device
Used on ca70806-001(19156), receiver-transmitter. 3.6mm overall length 1.4mm overall width navy: diode, zener, 5.59v; cage: surface mount precision zener diode zener voltage range: 5.45 - 5.73 volts; lead, antimony
01-581-5270
Diode Semiconductor Device
20 mj avalanche energy guaranteed; ultrafast 75 nanosecond recovery time; 175 degree celsius operating junction temperature; to-220 package; epoxy meets UL94 v-0 at 0.125"; low forward voltage; low leakage current; high temperature glass passivated junction; reverse voltage to 1000 v
01-581-5299
Diode Semiconductor Device
Used on 2510a (34423), phase angle voltmeter (nsn 6625-01-560-8593).
01-581-5304
Diode Semiconductor Device
Used on 2510a (34423), phase angle voltmeter (nsn 6625-01-560-8593).
01-581-6089
Diode Semiconductor Device
Used on circuit card assembly. diode; 6a 60v schottky rectifier extremely fast switching; extremely low forward drop; platinum barrier with avalanche guardrings; dpak 4 lead single guage surface mount; 4 pins; rail type
01-581-6097
Transistor
Used on circuit card assembly. transistor; dual p-channel 30-v (d-s) mosfet halogen-free; rohs compliant; drain-source voltage -30v; gate-source voltage porm 20v
01-581-6184
Semiconductor Device Rectifier
Used on rectifier. 1.000" overall length 0.127" overall width silicon cartridge rectifier
01-581-9384
Semiconductor Device Assembly
Used on an/bsq-11 (v) 1,2, and 3 mlcs. 5.500" overall length (dwg title) diode assy, voltage regulator item includes: rectifier, general purpose, 50v peak p/n 1N4001 (6ea) ; ring terminal, crimp no. 6 red, 22-18awg, nylon p/n PN18-6r-c (2ea) ; heat shrink tubing, flame retardant/ 1/8 inch, black p/n fit-221v-1/8-blk (1ea) ; heat shrink tubing, flame retardant, 1/4 inch, white p/n fit-221v-1/4-wht (1ea) ; label, laser printable, white/transparent (1 inch x 1.33 inch) p/n LJSL5-Y3-1 (1ea) ; zip tape mity mark labels p/n mmrb 0-12 (1ea)
01-582-1062
Diode Semiconductor Device
01-582-1082
Diode Semiconductor Device
01-582-1110
Semiconductor Device Rectifier
01-582-1332
Semiconductor Device Assembly
Semiconductor
01-582-1553
Unitized Semiconductor Devices
Transistor-mosfet dual p-chan e-modesi so-8
01-582-1713
Transistor
Nec's npn medium power microwave transistor low im distortion: -40 dbc; high output power: 27.5 dbm at typ; low noise: 1.5 db typ at 500mhz
