01-272-3485
Diode Semiconductor Device
01-272-3516
Semiconductor Device Assembly
01-272-3517
Semiconductor Device Assembly
01-272-3518
Semiconductor Device Assembly
01-272-3519
Semiconductor Device Assembly
01-272-3520
Semiconductor Device Assembly
01-272-3834
Diode Semiconductor Device
Used on receiver,radio,an/wsc-3.
01-272-4113
Semiconductor Device Rectifier
01-272-4114
Semiconductor Device Rectifier
01-272-4115
Semiconductor Device Rectifier
01-272-5060
Transistor
0.210" overall length 0.205" overall width
01-272-5911
Transistor
Storage temp M65.0 to P200.0 deg c; single ended T066 case
01-272-6273
Transistor
1.525" overall length junction pattern arrangement: npn unf thread series
01-272-6274
Transistor
0.260" overall length junction pattern arrangement: npn
01-272-6934
Unitized Semiconductor Devices
0.210" overall length 0.205" overall width
01-272-7250
Transistor
Used on an/mps-t1.
01-272-7253
Transistor
Used on an/azlr-56c.
01-272-8136
Photo Semiconductor Device
Used on mark iii weather terminal.
01-272-8445
Diode Semiconductor Device
Used on digital unit,discrete.
01-272-8596
Diode Semiconductor Device
0.710" overall length
01-272-8944
Photo Semiconductor Device
Used on AEGIS. 0.225" overall length base lead 0.05 in. max.; internal junction configuration: npn
01-272-8945
Transistor
0.890" overall length 0.375" overall width junction pattern arrangement: npn
01-272-8946
Transistor
0.595" overall length 0.575" overall width the ceramic bodies of these devices contain beryllium oxide; junction pattern arrangement: npn unc thread series
01-272-8948
Semiconductor Device U Rectifier
2.250" overall length 0.750" overall width
01-272-9533
Transistor
0.170" overall length junction pattern arrangement: pnp
01-272-9534
Unitized Semiconductor Devices
2.900" overall length 1.900" overall width all semiconductor device diode junction pattern arrangement: pn
01-272-9537
Diode Semiconductor Device
01-272-9603
Transistor
1.573" overall length 1.050" overall width junction pattern arrangement: npn
01-272-9724
Semiconductor Device Assembly
Used on B52G/H. nuclear hardness critical item
01-273-0764
Transistor
1.573" overall length 1.050" overall width
01-273-0765
Diode Semiconductor Device
1.253" overall length unf thread series
01-273-0767
Thyristor Semiconductor Device
1.123" overall length internal junction configuration, pnpnp unf thread series
01-273-1060
Unitized Semiconductor Devices
0.290" overall length 1.000" overall width
01-273-2189
Transistor
0.595" overall length 0.580" overall width the ceramic bodies of these devices contain beryllium oxide; junction pattern arrangement: npn unc thread series
01-273-2647
Diode Semiconductor Device
