01-260-6615
Diode Semiconductor Device
0.185" overall length
01-260-6616
Unitized Semiconductor Devices
0.260" overall length all transistor junction pattern arrangement: pnp
01-260-7318
Diode Semiconductor Device
0.165" overall length
01-260-7319
Diode Semiconductor Device
0.200" overall length
01-260-7320
Diode Semiconductor Device
01-260-7939
Diode Semiconductor Device
01-260-8107
Transistor
Used on dmsp gss,c3.
01-260-8588
Semiconductor Device U Rectifier
01-260-9303
Diode Semiconductor Device
01-260-9304
Diode Semiconductor Device
01-260-9305
Diode Semiconductor Device
01-260-9306
Diode Semiconductor Device
01-260-9307
Diode Semiconductor Device
01-261-0642
Diode Semiconductor Device
01-261-0643
Diode Semiconductor Device
01-261-1805
Diode Semiconductor Device
01-261-1806
Diode Semiconductor Device
01-261-1807
Diode Semiconductor Device
01-261-2184
Unitized Semiconductor Devices
01-261-2261
Diode Semiconductor Device
1.253" overall length unf thread series
01-261-2262
Diode Semiconductor Device
0.300" overall length
01-261-2263
Diode Semiconductor Device
1.253" overall length unf thread series
01-261-3946
Diode Semiconductor Device
01-261-4004
Transistor
1.573" overall length 1.050" overall width junction pattern arrangement: npn
01-261-4005
Diode Semiconductor Device
0.185" overall length
01-261-4006
Diode Semiconductor Device
1.253" overall length unf thread series
01-261-4007
Diode Semiconductor Device
01-261-4280
Diode Semiconductor Device
01-261-4376
Transistor
0.980" overall length 0.400" overall width contains hazardous material beryllium oxide must be disposed of as toxic waste
01-261-4377
Transistor
1.060" overall length 0.380" overall width junction pattern arrangement: npn
01-261-4476
Transistor
Used on lgm 30 minuteman missile. nuclear hardness critical item
01-261-4477
Transistor
Used on minuteman missile. nuclear hardness critical item
