Semiconductor Devices And Associated Hardware FSG 59 — FSC 5961

NSN
NIIN
Name
Details
01-241-7151
Thyristor Semiconductor Device
Used on 1430-01-111-2328. 3.327" overall length unf thread series
01-241-7273
Diode Semiconductor Device
0.570" overall length
01-241-7660
Transistor
01-241-7661
Transistor
01-241-7915
Transistor
Item is esd
01-241-7916
Transistor
Used on b1b acft. 1.050" overall length
01-241-7917
Transistor
Used on zsupport equipment, b-1 aircraft; los angeles class ssn (688); landing craft air cushion (lcac); nimitz class cvn; arleigh burke class ddg; oliver perry class ffg; forrestal class cv; spruance class dd (963); ticonderoga class cg (47). 0.210" overall length weapon system essential; junction pattern arrangement: npn
01-241-7918
Transistor
0.210" overall length junction pattern arrangement: pnp
01-241-7919
Unitized Semiconductor Devices
0.785" overall length 0.260" overall width
01-241-8111
Semiconductor Device Assembly
01-241-8112
Semiconductor Device Assembly
Esd
01-241-8375
Transistor
01-241-8376
Transistor
01-241-8379
Thyristor Semiconductor Device
194.1mm overall length unf thread series
01-241-9381
Transistor
Used on message pro aux stor. 0.375" overall length hci
01-241-9382
Diode Semiconductor Device
0.370" overall length
01-241-9383
Diode Semiconductor Device
0.315" overall length
01-241-9528
Semiconductor Device Assembly
Used on ir maverick agm65d.
01-241-9529
Semiconductor Device Assembly
Esd
01-241-9633
Diode Semiconductor Device
0.494" overall length yreverse voltage (piv) = 35v; forward current (if) = 100ma; forward voltage drop (v) = 1.2v; jun on temperature (tj) = 100 deg. c.; sto e temperature (tjs) = -55 to +100 deg. c.; reverse current @ 20v, tj-60 deg. c. (ir) = 1 microamp
01-241-9661
Diode Semiconductor Device
Used on transmitter, radio.
01-241-9662
Diode Semiconductor Device
Used on transmitter, radio.
01-241-9773
Transistor
01-241-9774
Transistor
01-241-9775
Transistor
01-241-9776
Transistor
01-241-9778
Transistor
01-241-9780
Diode Semiconductor Device
01-241-9782
Diode Semiconductor Device
01-241-9970
Transistor
01-242-2810
Semiconductor Device Retainer
2b single mounting facility thread class 1.440" overall length 0.700" overall width chromate surface treated irregular unc single mounting facility thread series
01-242-2879
Transistor
0.562" overall length 0.375" overall width junction pattern arrangement: npn
01-242-2881
Transistor
0.750" overall length 0.562" overall width
01-242-2882
Transistor
1.218" overall length unf thread series
01-242-2885
Diode Semiconductor Device
0.120" overall length
01-242-3302
Diode Semiconductor Device
0.230" overall length
01-242-3303
Diode Semiconductor Device
Used on an/apm-427.
01-242-3304
Diode Semiconductor Device
Used on an/apm-427. 0.190" overall length unc thread series
01-242-3305
Diode Semiconductor Device
Used on an/apm-427.
01-242-3306
Diode Semiconductor Device
Used on an/apm-427.
01-242-3308
Diode Semiconductor Device
Used on an/apm-427.
01-242-3309
Diode Semiconductor Device
Used on an/apm-427. 0.158" overall length unc thread series
01-242-4004
Transistor
Used on 6920-01-085-8514.
01-242-5141
Transistor
1.550" overall length 1.050" overall width junction pattern arrangement: npn
01-242-5142
Thyristor Semiconductor Device
1.563" overall length 28 thread quantity per inch unf thread series
01-242-5866
Diode Semiconductor Device
01-242-6114
Photo Semiconductor Device
0.375" overall length 0.250" overall width
01-242-6115
Transistor
0.250" overall length junction pattern arrangement: pnp
01-242-6179
Semiconductor Device U Rectifier
Full wave bridge rectifier 3 phase; 25 amp; peak inverse voltage 200.0 v; operating temp range M65.0 deg c to P150.0 deg c; 2.280 in. max lg; 0.770 in. max w; 0.510 in. max h; 5 turret type terminals; terminals 0.310 in. max lg; 0.151 in. max dia
01-242-6371
Diode Semiconductor Device
Material will be in accordance with ships parts control center activity hx quality control, manufacturing
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