Semiconductor Devices And Associated Hardware FSG 59 — FSC 5961

NSN
NIIN
Name
Details
01-064-2504
Diode Semiconductor Device
1.150" overall length
01-064-2992
Transistor
01-064-2993
Transistor
01-064-2994
Transistor
Junction pattern arrangement: npn
01-064-2995
Transistor
0.180" overall length junction pattern arrangement: pnp
01-064-2998
Diode Semiconductor Device
1.237" overall length unf thread series
01-064-3293
Semiconductor Device Rectifier
2.250" overall length 0.750" overall width
01-064-3560
Semiconductor Device Rectifier
1.220" overall length 0.720" overall width six JANTXVIN6074 ultra fast recovery, silicon power rectifiers diodes, connected in parallel
01-064-3896
Diode Semiconductor Device
01-064-3897
Diode Semiconductor Device
01-064-3898
Diode Semiconductor Device
01-064-4198
Transistor
0.435" overall length 0.305" overall width junction pattern arrangement: npn
01-064-4199
Transistor
01-064-4201
Transistor
0.170" overall length junction pattern arrangement: npn unc thread series
01-064-4202
Transistor
0.568" overall length 0.390" overall width junction pattern arrangement: npn
01-064-4207
Diode Semiconductor Device
0.196" overall length
01-064-4208
Diode Semiconductor Device
0.375" overall length
01-064-4209
Semiconductor Device U Rectifier
2.250" overall length 0.750" overall width
01-064-4210
Diode Semiconductor Device
01-064-4212
Diode Semiconductor Device
01-064-4214
Diode Semiconductor Device
Used on strategic weapon systems (poseidon and trident). voltage rating is ; weapon system essential; junction pattern arrangement: pin
01-064-4215
Diode Semiconductor Device
Used on strategic weapon systems (poseidon and trident). voltage rating is ; weapon system essential; junction pattern arrangement: pin
01-064-4217
Thyristor Semiconductor Device
0.330" overall length
01-064-4218
Thyristor Semiconductor Device
0.422" overall length
01-064-4322
Semiconductor Device U Rectifier
Efull wave bridge rectifier; silicon; 1.145 in. max square; 0.193 in. dia thru center hole; 4 tinned plate terminals; corrosion resistant sealed case; M55 deg to P150 deg c operating junction temp
01-064-4400
Semiconductor Device Set
01-064-4401
Semiconductor Device Set
01-064-4402
Semiconductor Device Set
01-064-4436
Transistor
0.187" overall length
01-064-4869
Transistor
01-064-4870
Transistor
0.250" overall length junction pattern arrangement: npn
01-064-4871
Transistor
0.170" overall length junction pattern arrangement: pnp
01-064-4872
Diode Semiconductor Device
Used on strategic weapon systems (poseidon and trident). current rating is ; weapon system essential; junction pattern arrangement: pin
01-064-4873
Diode Semiconductor Device
0.300" overall length
01-064-4874
Diode Semiconductor Device
0.160" overall length
01-064-4875
Diode Semiconductor Device
0.130" overall length
01-064-4876
Diode Semiconductor Device
0.120" overall length
01-064-5732
Unitized Semiconductor Devices
01-064-5733
Unitized Semiconductor Devices
01-064-5735
Transistor
0.260" overall length junction pattern arrangement: pnp
01-064-5736
Transistor
0.260" overall length junction pattern arrangement: pnp
01-064-5737
Transistor
Used on strategic weapon system (poseidon and trident).. 0.260" overall length junction pattern arrangement: npn
01-064-5738
Diode Semiconductor Device
Used on strategic weapon systems (poseiden & trident). 0.170" overall length
01-064-6490
Semiconductor Device Assembly
5.469" overall length 5.000" overall width bore hole size 2.250 in. dia
01-064-6661
Semiconductor Device Rectifier
01-064-6695
Transistor
01-064-6696
Transistor
01-064-6882
Unitized Semiconductor Devices
0.300" overall length 0.280" overall width all transistor junction pattern arrangement: pnp
01-064-6883
Transistor
Junction pattern arrangement: pnp
01-064-6885
Diode Semiconductor Device
Used on dgeneral purpose electronic test equipment gpete; olive perry class ffg; yellowstone class ad-41; support equipment, f-15 aircraft; strategic weapon systems (poseidon and trident); emory s. land as. 0.170" overall length weapon system essential
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