00-829-0781
Transistor
2.050" overall length junction pattern arrangement: npn unf thread series
00-829-0784
Diode Semiconductor Device
00-829-0785
Diode Semiconductor Device
00-829-1069
Transistor
Junction pattern arrangement: pnp
00-829-1390
Diode Semiconductor Device
0.250" overall length
00-829-1566
Diode Semiconductor Device
00-829-1567
Diode Semiconductor Device
0.405" overall length unf thread series
00-829-1569
Diode Semiconductor Device
00-829-1630
Transistor
0.562" overall length junction pattern arrangement: pnp
00-829-2043
Transistor
0.240" overall length junction pattern arrangement: npn
00-829-2044
Diode Semiconductor Device
0.230" overall length
00-829-2045
Transistor
0.210" overall length junction pattern arrangement: pnp
00-829-2164
Diode Semiconductor Device
00-829-2360
Transistor
0.280" overall length junction pattern arrangement: npn unf thread series
00-829-2386
Diode Semiconductor Device
0.250" overall length
00-829-2736
Diode Semiconductor Device
0.265" overall length
00-829-2743
Thyristor Semiconductor Device
Used on usns henry j. kaiser class tao. 0.505" overall length junction pattern arrangement: pnpn; weapon system essential unf thread series
00-829-3046
Diode Semiconductor Device
0.285" overall length
00-829-3160
Diode Semiconductor Device
0.230" overall length
00-829-3179
Diode Semiconductor Device
0.550" overall length unf thread series
00-829-3258
Diode Semiconductor Device
0.375" overall length
00-829-5267
Diode Semiconductor Device
0.300" overall length
00-829-6994
Unitized Semiconductor Devices
Internal junction configuration transistor npn
00-829-9758
Diode Semiconductor Device
00-830-2038
Transistor
0.250" overall length junction pattern arrangement: npn
00-830-2155
Thyristor Semiconductor Device
0.260" overall length internal junction configuration arrangement pnpn
00-830-2261
Diode Semiconductor Device
00-830-2274
Diode Semiconductor Device
00-830-2275
Diode Semiconductor Device
00-830-2282
Diode Semiconductor Device
00-830-2377
Transistor
Junction pattern arrangement: npn
00-830-4043
Semiconductor Device Rectifier
00-830-4690
Transistor
0.517" overall length junction pattern arrangement: npn unf thread series
00-830-4759
Photo Semiconductor Device
Used on forrestal class cv; nimitz class cvn; wasp class lhd; oliver perry class ffg; arleigh burke class ddg; spruance class dd (963); ticonderoga class cg (47).
00-830-4888
Diode Semiconductor Device
0.205" overall length
00-830-4895
Diode Semiconductor Device
0.300" overall length
00-831-0054
Diode Semiconductor Device
Used on m12007501. 1.797" overall length
00-831-0056
Diode Semiconductor Device
2.000" overall length 0.500" overall width
00-831-0338
Diode Semiconductor Device
00-831-2673
Transistor
0.170" overall length
00-831-2677
Transistor
0.170" overall length junction pattern arrangement: pnp
00-831-2884
Transistor
0.375" overall length max sat. resistance 2.0 ohms; junction pattern arrangement: npn
00-831-2886
Transistor
0.260" overall length junction pattern arrangement: npn
00-831-6341
Transistor
Junction pattern arrangement: pnp
00-831-6370
Diode Semiconductor Device
0.220" overall length
00-831-6509
Transistor
0.062" overall length junction pattern arrangement: npn
00-831-6594
Photo Semiconductor Device
00-831-8518
Photo Semiconductor Device
Used on ticonderoga class cg (47); wasp class lhd; forrestal class cv; arleigh burke class ddg; spruance class dd (963); nimitz class cvn; oliver perry class ffg.
00-831-8676
Semiconductor Device U Rectifier
Three-phase full-wave bridge, 6 diodes interconnected in a molded plastic encapsulated case, hexagon shaped case, 5 lug terminals, 2-0.140 in. dia unthreaded mtg holes counterbored 0.250 in. by 0.125 in. mtg holes spaced 1.700 in. min to 1.750 in. max c to c; 8.0 amp dc output current; 100v peak reverse voltage per cell
