01-624-7502
Transistor
1.335" overall length 0.535" overall width rf power field effect transistor tech data shows this item was no longer manufactured since 2010; in tape
01-624-7504
Transistor
1.335" overall length 0.380" overall width rf power field effect transistor in tape
01-624-7505
Transistor
1.335" overall length 0.380" overall width rf power field effect transistors in tape
01-624-8012
Diode Semiconductor Device
Used on b-1 bomber. 5.44mm overall length 2.20mm overall width semiconductor device zener diode transient voltage suppressor
01-624-8262
Semiconductor Device Rectifier
01-624-8269
Semiconductor Device Rectifier
01-624-8495
Diode Semiconductor Device
Diode
01-624-8497
Diode Semiconductor Device
Diode
01-624-8773
Diode Semiconductor Device
2.375" overall length schottky barrier rectifier
01-624-9294
Transistor
Used on 5820-01-363-6929. n-channel enhancement-mode vertical dmos fet
01-624-9478
Transistor
T0-252aa package; n-channel, 60v, 50a, 13.5milla ohms
01-624-9483
Transistor
0.905" overall length 0.038" overall width
01-625-1388
Diode Semiconductor Device
01-625-2720
Semiconductor Device Rectifier
01-625-2889
Transistor
0.1968" overall length 0.2440" overall width transistor, mosfet lead free transistor
01-625-3406
Diode Semiconductor Device
92.0mm overall length 20.8mm overall width dual diode module dual
01-625-3429
Diode Semiconductor Device
Used on alsf2 new bedford panoramex (alsf2nbp). tvs diode assembly nbp alsf-2 ssalr type fa-10700. ti 6850.87 section 8 p. 8-41. 8A1CR1-CR4
01-625-3983
Diode Semiconductor Device
01-625-4124
Diode Semiconductor Device
01-625-4409
Transistor
0.106" overall length 0.099" overall width 3000 units to a reel from on semiconductor, smaller quantities may be ordered through mouser electronics cage 1JN02
01-625-4681
Diode Semiconductor Device
Current rating 1a; peak inverse voltage 400 volts; body material is thermoplastic.
01-625-4806
Diode Semiconductor Device
01-625-4924
Diode Semiconductor Device
0.045" overall length packed pin diodes rohs compliant, coaxial pack
01-625-5212
Diode Semiconductor Device
0.091" overall length 0.045" overall width -65 to 150 c operating temp
01-625-6619
Transistor
10.42mm overall length 6.73mm overall width
01-625-6771
Transistor
0.744" overall length 0.645" overall width rf power ldmos transistor 200 c max junction temp
01-625-7582
Unitized Semiconductor Devices
01-625-7607
Diode Semiconductor Device
01-625-7752
Diode Semiconductor Device
2.205" overall length
01-625-8108
Diode Semiconductor Device
0.715" overall length rohs compliant
01-625-8474
Semiconductor Device Assembly
Used on ansqq-89. 1.00" overall length 0.390" overall width center tap doubler assembly operating temperature: -55.00 deg. c. to 150.00 deg. c.; current rating: 36.00 amps; voltage rating: 600.00 vdc max;
01-625-8833
Diode Semiconductor Device
2.150" overall length avalanche zener diode storage temperature: -65.00 deg. c. to 175.00 deg. c.; lead finish: tin/lead; lead material: copper clad steel; hermetically sealed glass;
01-625-9088
Transistor
28.6mm overall length 10.0mm overall width 2SK2529, silicon n channel mos fet hi-speed power switching, low on-resistance
01-625-9167
Diode Semiconductor Device
Glass passivated fast efficent rectifier 3.0 amperes forward current; high temperature metallurgically bonded construction; glass passivated cavity-free junction; superfast recovery time for high efficiency; low forward forward voltage, high current capability; low leakage current; high surge current capability; high temperature soldering guaranteed; case-solid glass body; terminals-plated axial leads; polarity-color band denotes cathode end; mounting position-any; weight-0.037 ounce
01-625-9187
Diode Semiconductor Device
01-625-9563
Diode Semiconductor Device
Used on disk drives, switching power supplies, converters, free wheeling diodes, battery chargers and reverse battery protections. surface-mount schotlky rectifier designed for applications requiring low forward drop
01-625-9565
Semiconductor Device Assembly
Used on ic announcing. 3247.12mm overall length 1727.20mm overall width semiconductor device 25 tons 1490 total watts 300, 000 btu @89kw 208/230v-3ph-60hz usa:51.8 (h) x 68 (w) x 127.8 (l)
01-625-9961
Semiconductor Device Assembly
01-626-0171
Diode Semiconductor Device
2.24" overall length
01-626-1001
Semiconductor Device Rectifier
Rectifier assy
01-626-2033
Transistor
2.90" overall length 2.40" overall width npnepitaxial silicon transistor
01-626-2734
Diode Semiconductor Device
01-626-2735
Diode Semiconductor Device
01-626-2746
Transistor
Hexfet ower mosfet
