| Available Quantity | 36 |
| Available Conditions | NS |
| Classification | Semiconductor Devices and Associated Hardware - FSC 5961 |
| Schedule B | 8541500080 |
| Stock Check Date | 12/11/2025 |
Transistor
ceramic and metal
0.895in. and 0.906in. ⁓29/32"
silicon alloy
10.0 milliamperes emitter current, instantaneous
583.0 watts total power dissipation
rf and microwave transistor
designed for high power pulse iff, dme, and tacan; applications; 200 w (typ.) iff 1030 - 1090 mhz; 150 w (min.) dme 1025 - 1150 mhz; 140 w (typ.) tacan 960 - 1215 mhz; 8.2 db gain; refractory gold metallization; ballasting andlow thermal resistance for reliability and ruggedness; 30:1 load vswr capability at specified operating conditions;